Growth of ZnO Layers by Metal Organic Chemical Vapor Phase Epitaxy

2002 ◽  
Vol 192 (1) ◽  
pp. 189-194 ◽  
Author(s):  
N. Oleynik ◽  
A. Dadgar ◽  
J. Christen ◽  
J. Bl�sing ◽  
M. Adam ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Chemical Vapor ◽  
Vapor Phase Epitaxy ◽  
Organic Chemical ◽  
Metal Organic

Growth of epitaxial sodium-bismuth-titanate films by metal-organic chemical vapor phase deposition

2011 ◽  
Vol 520 (1) ◽  
pp. 239-244 ◽  
Author(s):  
J. Schwarzkopf ◽  
M. Schmidbauer ◽  
A. Duk ◽  
A. Kwasniewski ◽  
S. Bin Anooz ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Bismuth Titanate ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Sodium Bismuth Titanate ◽  
Vapor Phase Deposition ◽  
Metal Organic

scholarly journals Growth of Freestanding Gallium Nitride (GaN) Through Polyporous Interlayer Formed Directly During Successive Hydride Vapor Phase Epitaxy (HVPE) Process

Crystals ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 141 ◽  
Author(s):  
Haixiao Hu ◽  
Baoguo Zhang ◽  
Lei Liu ◽  
Deqin Xu ◽  
Yongliang Shao ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Vapor Phase ◽  
Chemical Vapor ◽  
Growth Stress ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Organic Chemical ◽  
High Quality ◽  
Continuous Growth

The progress of nitride technology is widely limited and hindered by the lack of high-quality gallium nitride (GaN) wafers. Therefore, a large number of GaN epitaxial devices are grown on heterogeneous substrates. Although various additional treatments of substrate have been used to promote crystal quality, there is still plenty of room for its improvement, in terms of direct and continuous growth based on the hydride vapor phase epitaxy (HVPE) technique. Here, we report a three-step process that can be used to enhance the quality of GaN crystal by tuning V/III rate during successive HVPE process. In the growth, a metal-organic chemical vapor deposition (MOCVD) grown GaN on sapphire (MOCVD-GaN/Al2O3) was employed as substrate, and a high-quality GaN polyporous interlayer, with successful acquisition, without any additional substrate treatment, caused the growth stress to decrease to 0.06 GPa. Meanwhile the quality of GaN improved, and the freestanding GaN was directly obtained during the growth process.

Optical and crystallographic properties and impurity incorporation of GaxIn1−xAs (0.44

1983 ◽  
Vol 54 (8) ◽  
pp. 4543-4552 ◽  
Author(s):  
K.‐H. Goetz ◽  
D. Bimberg ◽  
H. Jürgensen ◽  
J. Selders ◽  
A. V. Solomonov ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Liquid Phase ◽  
Vapor Phase ◽  
Liquid Phase Epitaxy ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Impurity Incorporation ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Structural and electronic properties of defects in semiconductors

1995 ◽  
Vol 53 ◽  
pp. 4-5
Author(s):  
J.L. Batstone
Keyword(s):  
Semiconductor Device ◽  
Chemical Vapor ◽  
Misfit Strain ◽  
Organic Chemical ◽  
Extended Defects ◽  
Transmission Electron ◽  
Semiconductor Thin Films ◽  
Wide Range ◽  
Metal Organic ◽  
Film Substrate

The development of growth techniques such as metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy during the last fifteen years has resulted in the growth of high quality epitaxial semiconductor thin films for the semiconductor device industry. The III-V and II-VI semiconductors exhibit a wide range of fundamental band gap energies, enabling the fabrication of sophisticated optoelectronic devices such as lasers and electroluminescent displays. However, the radiative efficiency of such devices is strongly affected by the presence of optically and electrically active defects within the epitaxial layer; thus an understanding of factors influencing the defect densities is required.Extended defects such as dislocations, twins, stacking faults and grain boundaries can occur during epitaxial growth to relieve the misfit strain that builds up. Such defects can nucleate either at surfaces or thin film/substrate interfaces and the growth and nucleation events can be determined by in situ transmission electron microscopy (TEM).

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